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dc.contributor.authorBouchenak Khelladi, Anes-
dc.contributor.otherHaddadi, Mourad, Directeur de thèse-
dc.descriptionMémoire de Projet de Fin d'Etudes: Electronique: Alger, Ecole Nationale Polytechnique: 2012fr_FR
dc.description.abstractComputers and other types of systems require the permanent or semi-permanent storage of large amounts of binary data and Memory is the portion of these systems which do it and in large quantities. The quest for a non-volatile memory technology that offers high storage density, high read and writes speeds, and low power consumption has triggered intense research into new materials, mechanisms and device architectures. The successful memory technologies emerging from these efforts have been the atomic switch, the resistive RAM and the magnetic tunnel junction. Researchers in this domain report a substantial advance in an alternative approach to non-volatile memory technology based on ferroelectric tunnel junctions achieving very low write powers, in a highly reproducible manner.fr_FR
dc.subjectNon-volatile memoriesfr_FR
dc.subjectTunnel junctionsfr_FR
dc.titleTunnel junction based memoriesfr_FR
Collection(s) :Département Electronique

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