Study and wide band characterization of nanometric materials on SOI

Abstract

In this thesis, new variants of porous silicon (PSi) substrates have been introduced. Through RF performance measurements, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standart silicon (Std), trap-rich (TR) and hiqh resistivity (HR). All of the mebtioned substrates have been fabricated where indentical samples of CPW lines have been integrated on and characterization to the millimeter wave frequencies (70 GHzà was performed. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.5 and great increase in the effective resistivity to values higher than 7 kΩ.cm As a concept proof, a millimeter-wave bandpass filter (MBPF) centered at 27 GHz has integrated on the investigated substrares. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as, a reduction in insertion loss and an enhancement of the filter selectivity. Having obtained the same filter performance by varing the temperarure the efficiency of the proposed PSi substrates has been well highlighted.